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5N High purity Anhydrous Boron Oxide 99.999%Min

5N High purity Anhydrous Boron Oxide 99.999%Min

Mainly used for GaAs, GaP, InP chemical compounds semiconductor materials synthesis and other application

Moisture

Grade
Content Range
(ppm.wt)
≤200201~500501~1000

Remark:Moisture content detect deviation 10%

 

Size

Diameter(mm)253535353580
weight(g)715182632100

Remark:According to customer requirements